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・ Johnston Drummond
・ Johnston Fernando
・ Johnston Forbes-Robertson
・ Johnston Gardens
・ Johnston Gate
・ Johnston Glacier
・ Johnston Hall
・ Johnston Hall (Elon College, North Carolina)
・ Johnston Hall (Milwaukee, Wisconsin)
・ Johnston Hall (University of Guelph)
・ Johnston Heights
・ Johnson's Baby
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・ Johnson's criteria
Johnson's figure of merit
・ Johnson's Harbour
・ Johnson's Island
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・ Johnson's Regiment of Militia
・ Johnson's rule
・ Johnson's Russia List
・ Johnson's Shipyard
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・ Johnson's Woods
・ Johnson, Arkansas
・ Johnson, California
・ Johnson, Delaware
・ Johnson, Drake & Piper, Inc.


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Johnson's figure of merit : ウィキペディア英語版
Johnson's figure of merit

Johnson's figure of merit is a measure of suitability of a semiconductor material for high frequency power transistor applications and requirements. More specifically, it is the product of the charge carrier saturation velocity in the material and the electric breakdown field under same conditions, first proposed by A. Johnson of RCA in 1965.〔"Physical limitations on frequency and power parameters of transistors", RCA Review, vol. 26, pp163-177, 1965.〕 Note that this figure of merit (FoM) is applicable to both field-effect transistors (FETs), and with proper interpretation of the parameters, also to bipolar junction transistors (BJTs).
==References==


抄文引用元・出典: フリー百科事典『 ウィキペディア(Wikipedia)
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